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Condensed Matter > Materials Science

Title: Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

Abstract: An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.
Comments: Proceedings of the SIMD-4 conference. Hawaii, USA (December 1-5, 2003)
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Superlattices and Microstructures 34, 539-545 (2003)
DOI: 10.1016/j.spmi.2004.03.055
Cite as: arXiv:cond-mat/0406148 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0406148v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Andrei Yakunin [view email]
[v1] Sun, 6 Jun 2004 21:49:54 GMT (385kb)

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