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Condensed Matter > Materials Science

Title: Electronic states of Mn4+ ions in p-type GaN

Abstract: The electronic states of manganese in p-type GaN are investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. A series of sharp PL lines at 1.0 eV is observed in codoped GaN and attributed to the intra d-shell transition 4T2(F)-4T1(F) of Mn4+ ions. PLE spectrum of the Mn4+ [4T2(F)-4T1(F)] luminescence reveals intra-center excitation processes via the excited states of Mn4+ ions. PLE peaks observed at 1.79 and 2.33 eV are attributed to the intra d-shell 4T1(P)-4T1(F) and 4A2(F)-4T1(F) transitions of Mn4+, respectively. In addition to the intra-shell excitation processes, a broad PLE band involving charge-transfer transition of the Mn4+/3+ deep level is observed, which is well described by the Lucovsky model. As determined from the onset of this PLE band, the position of the Mn4+/3+ deep level is 1.11 eV above the valence band maximum, which is consistent with prior theory using ab initio calculations. Our work indicates 4+ is the predominant oxidation state of Mn ions in p-type GaN:Mn when the Fermi energy is lower than 1.11 eV above the valence band maximum.
Comments: Submitted to Appl. Phys. Lett
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0406228 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0406228v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Bing Han [view email]
[v1] Wed, 9 Jun 2004 22:37:00 GMT (191kb)

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