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Condensed Matter > Materials Science

Title: Gate-controlled spin-splitting in quantum dots with ferromagnetic leads in the Kondo regime

Abstract: The effect of a gate voltage ($V_g$) on the spin-splitting of an electronic level in a quantum dot (QD) attached to ferromagnetic leads is studied in the Kondo regime using a generalized numerical renormalization group technique. We find that the $V_g$-dependence of the QD level spin-splitting strongly depends on the shape of the density of states (DOS). For one class of DOS shapes there is nearly no $V_g$-dependence, for another, $V_g$ can be used to control the magnitude and sign of the spin-splitting, which can be interpreted as a local exchange magnetic field. We find that the spin-splitting acquires a new type of logarithmic divergence. We give an analytical explanation for our numerical results and explain how they arise due to spin-dependent charge fluctuations.
Comments: 4 pages, 2 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Strongly Correlated Electrons (cond-mat.str-el)
Journal reference: Phys. Rev. B 72, 121302(R) (2005)
DOI: 10.1103/PhysRevB.72.121302
Cite as: arXiv:cond-mat/0406323 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0406323v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Jan Martinek [view email]
[v1] Tue, 15 Jun 2004 00:14:12 GMT (346kb)

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