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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Effect of an InP/In$_{0.53}$Ga$_{0.47}$As Interface on Spin-orbit Interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As Heterostructures

Authors: Y. Lin, T. Koga, J. Nitta (NTT Basic Research Laboratories)
Abstract: We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $\alpha$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $\mathbf{k\cdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
Comments: Submitted for publication; v2 to adjust Eq.6; v3 to correct the figure file name; v4, a revised version accepted for publication in Phys. Rev. B
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI: 10.1103/PhysRevB.71.045328
Cite as: arXiv:cond-mat/0407020 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0407020v3 [cond-mat.mes-hall] for this version)

Submission history

From: Yiping Lin [view email]
[v1] Thu, 1 Jul 2004 09:22:37 GMT (126kb)
[v2] Wed, 14 Jul 2004 08:15:30 GMT (127kb)
[v3] Sat, 20 Nov 2004 06:24:43 GMT (127kb)

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