References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Effect of an InP/In$_{0.53}$Ga$_{0.47}$As Interface on Spin-orbit Interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As Heterostructures
(Submitted on 1 Jul 2004 (v1), last revised 20 Nov 2004 (this version, v3))
Abstract: We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $\alpha$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $\mathbf{k\cdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
Submission history
From: Yiping Lin [view email][v1] Thu, 1 Jul 2004 09:22:37 GMT (126kb)
[v2] Wed, 14 Jul 2004 08:15:30 GMT (127kb)
[v3] Sat, 20 Nov 2004 06:24:43 GMT (127kb)
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