References & Citations
Condensed Matter > Materials Science
Title: The Diffusion of Sb into Ge without Contamination by Fast Diffusing Electrically Active Impurities
(Submitted on 6 Jul 2004 (v1), last revised 10 Nov 2004 (this version, v5))
Abstract: A method has been developed to permit the diffusion of Sb into Ge at high temperatures (~850 C) without contamination by fast diffusing electrically active impurities in particular by Cu. A liquid metal alloy is used as a getter of Cu and other fast diffusing impurities. This alloy, Ga- In eutectic, completely encloses the Ge sample although in physical contact on only one face. The behaviour of Cu as a contaminant in Ge and the methods known to prevent and extract (or gather) Cu contamination are reviewed briefly. Preliminary experiments are described which demonstrate the difficulty of removing fast diffusing impurities in spite of the use of liquid metal getter (Ge-In and Au). The advantages and disadvantages of the technique are discussed.
Submission history
From: Dale Prokopovich [view email][v1] Tue, 6 Jul 2004 02:13:22 GMT (57kb)
[v2] Wed, 7 Jul 2004 04:30:44 GMT (56kb)
[v3] Thu, 15 Jul 2004 00:27:35 GMT (55kb)
[v4] Mon, 30 Aug 2004 23:34:21 GMT (55kb)
[v5] Wed, 10 Nov 2004 04:52:04 GMT (55kb)
Link back to: arXiv, form interface, contact.