References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: A spin field effect transistor for low leakage current
(Submitted on 7 Jul 2004 (v1), last revised 9 Sep 2004 (this version, v2))
Abstract: In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the ``off''-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin-orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current.
Submission history
From: Supriyo Bandyopadhyay [view email][v1] Wed, 7 Jul 2004 17:07:57 GMT (13kb)
[v2] Thu, 9 Sep 2004 13:17:48 GMT (13kb)
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