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Condensed Matter > Materials Science

Title: Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey

Abstract: We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization.
Comments: 2 pages, 2 figures. To appear in the proceedings of the 27th International Conference on the Physics of Semiconductors (ICPS-27, Flagstaff, AZ, July 26-30, 2004)
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1063/1.1994621
Cite as: arXiv:cond-mat/0408021 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0408021v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Michael Scarpulla [view email]
[v1] Mon, 2 Aug 2004 05:18:42 GMT (50kb)

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