High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films

Theodoropoulou, Nikoleta; Misra, Vinith; Philip, John; LeClair, Patrick; Berera, Geetha P.; Moodera, Jagadeesh S.; Satpati, Biswarup; Som, Tapobrata

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Condensed Matter > Materials Science

Title: High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films

Authors: Nikoleta Theodoropoulou (1), Vinith Misra (1), John Philip (1), Patrick LeClair (1), Geetha P. Berera (1), Jagadeesh S. Moodera (1), Biswarup Satpati (2), Tapobrata Som (2) ((1) Francis Bitter Magnet Lab, Massachusetts Institute of Technology Cambridge, MA (2) Institute of Physics, Sachivalaya Marg, Bhubaneswar, India)

(Submitted on 12 Aug 2004)

Abstract: Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin polarized and participate in the observed ferromagnetic behavior.

Comments:	15 pages, 4 figures
Subjects:	Materials Science (cond-mat.mtrl-sci)
Cite as:	arXiv:cond-mat/0408294 [cond-mat.mtrl-sci]
	(or arXiv:cond-mat/0408294v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Nikoleta Theodoropoulou [view email]
[v1] Thu, 12 Aug 2004 20:09:15 GMT (340kb)

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