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Condensed Matter > Materials Science

Title: Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

Abstract: The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As capping. This means that the modification rate is not limited by the diffusion process, but rather by the surface trapping of the diffusing species.
Comments: 4 pages, 1 figure
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1103/PhysRevLett.94.139701
Cite as: arXiv:cond-mat/0412006 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0412006v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Janusz Kanski [view email]
[v1] Wed, 1 Dec 2004 08:17:33 GMT (49kb)

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