Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

Tang, C. S.; Mal'shukov, A. G.; Chao, K. A.

doi:10.1103/PhysRevB.71.195314

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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems

Authors: C. S. Tang, A. G. Mal'shukov, K. A. Chao

(Submitted on 8 Dec 2004 (v1), last revised 22 Mar 2005 (this version, v3))

Abstract: Based on the Keldysh formalism, the Boltzmann kinetic equation and the drift diffusion equation have been derived for studying spin polarization flow and spin accumulation under effect of the time dependent Rashba spin-orbit interaction in a semiconductor quantum well. The time dependent Rashba interaction is provided by time dependent electric gates of appropriate shapes. Several examples of spin manipulation by gates have been considered. Mechanisms and conditions for obtaining the stationary spin density and the induced rectified DC spin current are studied.

Comments:	10 pages, 3 figures, RevTeX4
Subjects:	Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference:	PHYSICAL REVIEW B 71, 195314 (2005)
DOI:	10.1103/PhysRevB.71.195314
Cite as:	arXiv:cond-mat/0412181 [cond-mat.mes-hall]
	(or arXiv:cond-mat/0412181v3 [cond-mat.mes-hall] for this version)

Submission history

From: Chi-Shung Tang [view email]
[v1] Wed, 8 Dec 2004 05:38:56 GMT (28kb)
[v2] Fri, 18 Feb 2005 05:22:09 GMT (28kb)
[v3] Tue, 22 Mar 2005 05:29:53 GMT (28kb)

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