References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers
(Submitted on 10 Jan 2005 (v1), last revised 17 Jun 2005 (this version, v3))
Abstract: We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.
Submission history
From: Ulf Gennser [view email][v1] Mon, 10 Jan 2005 20:57:03 GMT (260kb)
[v2] Mon, 10 Jan 2005 21:22:17 GMT (260kb)
[v3] Fri, 17 Jun 2005 16:40:58 GMT (261kb)
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