References & Citations
Condensed Matter > Materials Science
Title: Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells
(Submitted on 29 Jan 2005 (v1), last revised 23 Feb 2006 (this version, v2))
Abstract: We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is split in the presence of a magnetic field, characteristic of a Kondo resonance. The data is well explained as a resonant tunneling of conduction electrons at the Fermi level through the doped silicon impurity states inside the wells by using an impurity Anderson model. The Coulomb blockade resonance of the impurity states induces a Fano dip above the Kondo resonance.
Submission history
From: Shi-Jie Xiong [view email][v1] Sat, 29 Jan 2005 04:42:39 GMT (83kb)
[v2] Thu, 23 Feb 2006 09:52:43 GMT (45kb)
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