References & Citations
Condensed Matter > Materials Science
Title: Spin- and energy relaxation of hot electrons at GaAs surfaces
(Submitted on 1 Apr 2005 (v1), last revised 29 Aug 2005 (this version, v2))
Abstract: The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution of Boltzmann-type kinetic equations allows one to obtain quantitative results for spin relaxation in semiconductors that go beyond the original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results using surface sensitive two-photon photoemission techniques show that the spin relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface is several times longer than the corresponding bulk spin relaxation-times. A theoretical explanation of these results in terms of the reduced density of holes in the band-bending region at the surface is presented.
Submission history
From: Hans Christian Schneider [view email][v1] Fri, 1 Apr 2005 15:14:47 GMT (362kb)
[v2] Mon, 29 Aug 2005 15:58:54 GMT (220kb)
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