References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
(Submitted on 13 Apr 2005 (v1), last revised 24 Mar 2006 (this version, v2))
Abstract: We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies accurately and we show how the capacitance matrices of the traps can be obtained from the shape of the anomalies. From these capacitance matrices we deduce that the traps are located near or inside the wire. Based on the occurrence of the anomalies in wires with different doping levels we infer that most of the traps are arsenic dopant states. In some cases the anomalies are accompanied by a random telegraph signal which allows time resolved monitoring of the occupation of the trap. The spin of the trap states is determined via the Zeeman shift.
Submission history
From: Max Hofheinz [view email][v1] Wed, 13 Apr 2005 15:11:44 GMT (383kb)
[v2] Fri, 24 Mar 2006 14:43:53 GMT (566kb)
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