References & Citations
Condensed Matter > Materials Science
Title: High frequency Scanning Gate Microscopy and local memory effect of carbon nanotube transistors
(Submitted on 21 Apr 2005 (v1), last revised 22 Apr 2005 (this version, v2))
Abstract: We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to image changes in the impedance of swCN-FET circuits induced by the SGM-tip gate. In contrast to earlier reports, the results of both experiments are consistent with a simple RC parallel circuit model of the swCN-FET, with a time constant of 0.3 ms. We also use the SGM tip to show the local nature of the memory effect normally observed in swCN-FETs, implying that nanotube-based memory cells can be miniaturized to dimensions of the order of tens of nm.
Submission history
From: Cristian Staii [view email][v1] Thu, 21 Apr 2005 19:35:57 GMT (257kb)
[v2] Fri, 22 Apr 2005 13:48:53 GMT (257kb)
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