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Condensed Matter > Materials Science

Title: Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO

Abstract: We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.
Comments: To appear in J. Appl. Phys. (invited paper in Proceedings of the 49th Annual Conference on Magnetism & Magnetic Materials); pdf file only
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: J. Appl. Phys. 97, art. no. 10D304 (2005)
DOI: 10.1063/1.1846033
Cite as: arXiv:cond-mat/0505015 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0505015v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Nitin Samarth [view email]
[v1] Sun, 1 May 2005 03:14:01 GMT (591kb)

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