Title: The Memory Effect in Electron Glasses

Abstract: We present a theory for the memory effect in electron glasses. It is manifested in fast gate voltage sweeps as a dip in the conductivity around the equilibration gate voltage. We show that this feature, also known as the anomalous field effect, arises from the long-time persistence of correlations in the electronic configuration. We argue that the gate voltage at which the memory dip saturates is determined by the instability of the glassy state upon the injection of a critical number of excess carriers. We find that this saturation gate voltage increases with temperature, whereas the gate voltage beyond which memory erasure occurs is temperature independent. Using standard percolation arguments, we calculate the anomalous field effect as a function of gate voltage, temperature, carrier density and disorder. Our results are consistent with experiments, and in particular, they reproduce the observed scaling of the width of the memory dip with various parameters.