Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

Ganguly, Swaroop; MacDonald, A. H.; Register, L. F.; Banerjee, S.

doi:10.1103/PhysRevB.73.033310

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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

Authors: Swaroop Ganguly, A. H. MacDonald, L. F. Register, S. Banerjee

(Submitted on 4 May 2005 (v1), last revised 5 May 2005 (this version, v2))

Abstract: We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.

Comments:	10 pages, 3 figures, submitted to Phys. Rev. B; typo removed in revised version - spurious eq.12 immediately after eq.11
Subjects:	Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
DOI:	10.1103/PhysRevB.73.033310
Cite as:	arXiv:cond-mat/0505101 [cond-mat.mes-hall]
	(or arXiv:cond-mat/0505101v2 [cond-mat.mes-hall] for this version)

Submission history

From: Swaroop Ganguly [view email]
[v1] Wed, 4 May 2005 12:47:00 GMT (69kb)
[v2] Thu, 5 May 2005 08:31:51 GMT (69kb)

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