Raman Measurements and Stress Analysis in Gallium Ion Implanted Gallium Nitride Epitaxial Layers on Sapphire

Mal, S.; Singha, A.; Dhara, S.; Roy, A.

doi:10.1016/j.tsf.2006.07.018

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Condensed Matter > Materials Science

Title: Raman Measurements and Stress Analysis in Gallium Ion Implanted Gallium Nitride Epitaxial Layers on Sapphire

Authors: S. Mal, A. Singha, S. Dhara, A. Roy

(Submitted on 13 May 2005 (v1), last revised 27 Jun 2006 (this version, v2))

Abstract: In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for $E_2$(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we have observed disorder-activated Raman scattering.

Comments:	26pages, 3 figures
Subjects:	Materials Science (cond-mat.mtrl-sci)
DOI:	10.1016/j.tsf.2006.07.018
Cite as:	arXiv:cond-mat/0505335 [cond-mat.mtrl-sci]
	(or arXiv:cond-mat/0505335v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Anushree Roy [view email]
[v1] Fri, 13 May 2005 05:39:28 GMT (201kb)
[v2] Tue, 27 Jun 2006 05:36:37 GMT (86kb)

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