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Condensed Matter > Materials Science

Title: Direct Observation of Site-specific Valence Electronic Structure at Interface: SiO2/Si Interface

Abstract: Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO2/Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the SiO2/Si interface; local electronic structure strongly depends on the chemical states of each atom. In addition we compared the experimental results with first-principle calculations, which quantitatively revealed the interfacial properties in atomic-scale.
Comments: 4 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1103/PhysRevB.73.045336
Cite as: arXiv:cond-mat/0506128 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0506128v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Yoshiyuki Yamashita [view email]
[v1] Mon, 6 Jun 2005 07:10:25 GMT (611kb)

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