References & Citations
Condensed Matter > Materials Science
Title: Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
(Submitted on 11 Jul 2005 (v1), last revised 17 Nov 2005 (this version, v2))
Abstract: We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Gamma, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power.
Submission history
From: James Lloyd-Hughes [view email][v1] Mon, 11 Jul 2005 16:22:24 GMT (77kb)
[v2] Thu, 17 Nov 2005 10:48:47 GMT (60kb)
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