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Condensed Matter > Disordered Systems and Neural Networks

Title: Two sub-band conductivity of Si quantum well

Abstract: We report on two sub-band transport in double gate SiO$_2$-Si-SiO$_2$ quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total density is adjusted by gate voltages between $\sim 0.7\times 10^{16}$ $-3.0\times 10^{16}$ m$^{-2}$. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. Close to bi-layer/second sub-band threshold the non-monotonic behavior is interpreted to arise from scattering from localized band tail electrons.
Comments: Presented at MSS12 conference July 10-15, 2005 Albuquerque, New Mexico, USA. Post-deadline paper, Poster PA2-293. Version 2: typos corrected, few clarifications added in the text, summary shortened, title removed from Ref. 3
Subjects: Disordered Systems and Neural Networks (cond-mat.dis-nn); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Physica E 32, 281 (2006).
DOI: 10.1016/j.physe.2005.12.093
Cite as: arXiv:cond-mat/0507416 [cond-mat.dis-nn]
  (or arXiv:cond-mat/0507416v2 [cond-mat.dis-nn] for this version)

Submission history

From: Mika Prunnila [view email]
[v1] Mon, 18 Jul 2005 15:02:20 GMT (312kb)
[v2] Wed, 3 Aug 2005 12:10:30 GMT (312kb)

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