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Condensed Matter > Materials Science

Title: Spin-dependent tunneling through high-k LaAlO3

Abstract: We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/STO/Co junctions. We discuss possible reasons for this behaviour.
Comments: 14 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Appl. Phys. Lett. 87, 212501 (2005)
DOI: 10.1063/1.2132526
Cite as: arXiv:cond-mat/0507437 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0507437v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Vincent Garcia [view email]
[v1] Tue, 19 Jul 2005 10:53:21 GMT (377kb)

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