References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Coulomb blockade in a nanoscale phosphorus-in-silicon island
(Submitted on 18 Oct 2005 (v1), last revised 21 Feb 2006 (this version, v4))
Abstract: We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the device a 50 nm diameter island, containing ~600 donors and having a metallic density of states, is separated from source and drain leads by undoped silicon tunnel barriers. The central island and tunnel barriers are covered by a surface gate in a field effect transistor geometry allowing the coupling between the leads and island to be controlled. Coulomb blockade due to charging of the doped island is measured, the oscillation period is observed to be constant while the charging energy is dependent on the surface gate voltage. We discuss the possibilities of approaching the few electron regime in these structures, with the aim of observing and manipulating discrete quantum mechanical states.
Submission history
From: Dr Fay Hudson [view email][v1] Tue, 18 Oct 2005 23:00:13 GMT (260kb)
[v2] Tue, 25 Oct 2005 01:36:35 GMT (265kb)
[v3] Wed, 30 Nov 2005 00:03:58 GMT (264kb)
[v4] Tue, 21 Feb 2006 03:09:31 GMT (264kb)
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