Conductance quantization in etched Si/SiGe quantum point contacts

Scappucci, G.; Di Gaspare, L.; Giovine, E.; Notargiacomo, A.; Leoni, R.; Evangelisti, F.

doi:10.1103/PhysRevB.74.035321

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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Conductance quantization in etched Si/SiGe quantum point contacts

Authors: G. Scappucci (1), L. Di Gaspare (1), E. Giovine (2), A. Notargiacomo (2), R. Leoni (2), F. Evangelisti (1 and 2) ((1) Dipartimento di Fisica "E. Amaldi", Universita' Roma TRE, Roma, Italy, (2) Istituto di Fotonica e Nanotecnologie, IFN-CNR, Roma, Italy)

(Submitted on 16 Dec 2005 (v1), last revised 21 Jun 2006 (this version, v2))

Abstract: We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.

Comments:	to appear in Physical Review B
Subjects:	Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI:	10.1103/PhysRevB.74.035321
Cite as:	arXiv:cond-mat/0512412 [cond-mat.mes-hall]
	(or arXiv:cond-mat/0512412v2 [cond-mat.mes-hall] for this version)

Submission history

From: Andrea Notargiacomo [view email]
[v1] Fri, 16 Dec 2005 18:11:28 GMT (405kb)
[v2] Wed, 21 Jun 2006 10:24:39 GMT (373kb)

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