References & Citations
Condensed Matter > Materials Science
Title: Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
(Submitted on 23 Jan 2006)
Abstract: Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.
Submission history
From: Michihiko Yamanouchi [view email][v1] Mon, 23 Jan 2006 13:38:29 GMT (105kb)
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