References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Electric-field-dependent spectroscopy of charge motion using a single-electron transistor
(Submitted on 24 Jan 2006 (v1), last revised 26 May 2006 (this version, v2))
Abstract: We present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent control of the substrate and transistor island potentials. Through controlled charging of the Si/SiO_2 interface we show that the fluctuators cannot reside in the Si layer or in the tunnel barriers. Combined with the large measured signal amplitude, this implies that the defects must be located very near the oxide surface.
Submission history
From: Kenton Brown [view email][v1] Tue, 24 Jan 2006 20:44:43 GMT (809kb)
[v2] Fri, 26 May 2006 20:50:20 GMT (810kb)
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