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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Crosstalk between nanotube devices: contact and channel effects

Abstract: At reduced dimensionality, Coulomb interactions play a crucial role in determining device properties. While such interactions within the same carbon nanotube have been shown to have unexpected properties, device integration and multi-nanotube devices require the consideration of inter-nanotube interactions. We present calculations of the characteristics of planar carbon nanotube transistors including interactions between semiconducting nanotubes and between semiconducting and metallic nanotubes. The results indicate that inter-tube interactions affect both the channel behavior and the contacts. For long channel devices, a separation of the order of the gate oxide thickness is necessary to eliminate inter-nanotube effects. Because of an exponential dependence of this length scale on dielectric constant, very high device densities are possible by using high-k dielectrics and embedded contacts.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI: 10.1088/0957-4484/17/9/051
Cite as: arXiv:cond-mat/0602006 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0602006v1 [cond-mat.mes-hall] for this version)

Submission history

From: Francois Leonard [view email]
[v1] Tue, 31 Jan 2006 23:15:54 GMT (825kb)

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