References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Dissipative quantum phase transition in a single electron transistor
(Submitted on 1 Feb 2006 (this version), latest version 14 Feb 2006 (v2))
Abstract: We study the transport properties of a single electron transistor (SET) with highly resistive gate electrodes, and show that the SET displays a quantum phase transition analogous to the famous dissipative phase transition studied by Leggett [A. J. Leggett {\em et al.}, Rev. Mod. Phys. {\bf 59}, 1 (1987)]. At temperature T=0, the charge on the central island of a conventional SET changes smoothly as a function of gate voltage, due to quantum fluctuations. However, for sufficiently large gate resistance charge fluctuations on the island can freeze out even at the degeneracy point, causing the charge on the island to change in sharp steps as a function of gate voltage. For $R_g<R_C$ the steps remain smeared out by quantum fluctuations. The Coulomb blockade peaks in conductance display anomalous scaling at intermediate temperatures, and at very low temperatures a sharp step develops in the SET conductance.
Submission history
From: László Borda [view email][v1] Wed, 1 Feb 2006 13:27:03 GMT (48kb)
[v2] Tue, 14 Feb 2006 15:47:47 GMT (48kb)
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