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Condensed Matter > Other Condensed Matter
Title: Simulation and optimization of arsenic-implanted THz emitters
(Submitted on 9 Feb 2006 (v1), last revised 10 Feb 2006 (this version, v2))
Abstract: We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ionimplantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ionimplantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.
Submission history
From: Enrique Castro-Camus [view email][v1] Thu, 9 Feb 2006 09:39:03 GMT (267kb)
[v2] Fri, 10 Feb 2006 23:23:11 GMT (266kb)
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