References & Citations
Condensed Matter > Materials Science
Title: Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons
(Submitted on 28 Apr 2006 (this version), latest version 2 Aug 2006 (v2))
Abstract: We calculate the P-shell--to-S-shell decay lifetime \tau(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of \tau(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes \tau(P->S) compare well with data in (In,Ga)As/GaAs dots, showing that as long as holes are present there is no need for an alternative polaron mechanism.
Submission history
From: Gustavo A. Narvaez [view email][v1] Fri, 28 Apr 2006 20:32:07 GMT (29kb)
[v2] Wed, 2 Aug 2006 04:25:27 GMT (30kb)
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