References & Citations
Condensed Matter > Materials Science
Title: Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach
(Submitted on 31 May 2006 (v1), revised 5 Oct 2006 (this version, v3), latest version 9 Nov 2006 (v4))
Abstract: We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from very low temperature to the room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the scattering such as the electron--acoustic-phonon, the electron--longitudinal-optical-phonon, the electron--nonmagnetic-impurity and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno {\em et al.} [Physica E {\bf 6}, 817 (2000)] over the whole temperature regime (from 20 K to 300 K). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature ($<50$ K) in samples with low electron density ({\em e.g.}, density less than $1 \times 10^{11}$ cm$^{-2}$) but high mobility. This peak disappears in samples with high electron density ({\em e.g.} $2 \times 10^{11}$ cm$^{-2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high temperature case predicted.
Submission history
From: Prof. Dr. M. W. Wu [view email][v1] Wed, 31 May 2006 20:31:23 GMT (34kb)
[v2] Fri, 2 Jun 2006 01:22:05 GMT (26kb)
[v3] Thu, 5 Oct 2006 09:04:53 GMT (28kb)
[v4] Thu, 9 Nov 2006 02:55:32 GMT (37kb)
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