References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Shot noise of a multiwalled carbon nanotube field effect transistor
(Submitted on 26 Jun 2006 (v1), last revised 1 Jul 2006 (this version, v3))
Abstract: We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $\mu{V}/ \sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \cdot 10^{-5}$ e/$\sqrt{Hz}$.
Submission history
From: Fan Wu [view email][v1] Mon, 26 Jun 2006 13:14:35 GMT (243kb)
[v2] Thu, 29 Jun 2006 12:16:07 GMT (243kb)
[v3] Sat, 1 Jul 2006 20:09:03 GMT (243kb)
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