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Condensed Matter > Materials Science

Title: Electronic structure of graphite/6H-SiC interfaces

Authors: Th. Seyller, K. V. Emtsev, F. Speck, K.-Y. Gao, L. Ley
(Submitted on 9 Oct 2006)
Abstract: We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.
Comments: 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 3rd - 7th, 2006. Revised version. Proceeding will appear in Materials Science Forum
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0610220 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0610220v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Thomas Seyller [view email]
[v1] Mon, 9 Oct 2006 09:14:15 GMT (136kb)
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