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Condensed Matter > Materials Science

Title: Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

Authors: Jun Hayakawa, Shoji Ikeda, Young Min Lee, Fumihiro Matsukura, Hideo Ohno
(Submitted on 18 Oct 2006)
Abstract: We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450oC. Energy dispersive X-ray analysis shows that annealing at 450oC induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behavior are discussed.
Comments: 13 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1063/1.2402904
Cite as: arXiv:cond-mat/0610526 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0610526v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Shoji Ikeda [view email]
[v1] Wed, 18 Oct 2006 23:03:37 GMT (196kb)
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