On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode

Indlekofer, K. M.

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Condensed Matter > Other Condensed Matter

Title: On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode

Authors: K. M. Indlekofer

(Submitted on 29 Oct 2006 (v1), last revised 1 Nov 2006 (this version, v2))

Abstract: In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode is described by an idealized two-dimensional electron gas. Due to Coulomb scattering effects, the latter may introduce level broadening to the quantum dot system.

Subjects:	Other Condensed Matter (cond-mat.other)
Cite as:	arXiv:cond-mat/0610806 [cond-mat.other]
	(or arXiv:cond-mat/0610806v2 [cond-mat.other] for this version)

Submission history

From: Klaus Michael Indlekofer [view email]
[v1] Sun, 29 Oct 2006 11:49:15 GMT (19kb)
[v2] Wed, 1 Nov 2006 07:02:27 GMT (19kb)

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