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Condensed Matter > Strongly Correlated Electrons

Title: Influence of Correlated Hybridization on the Conductance of Molecular Transistors

Abstract: We study the spin-1/2 single-channel Anderson impurity model with correlated (occupancy dependent) hybridization for molecular transistors using the numerical renormalization-group method. Correlated hybridization can induce nonuniversal deviations in the normalized zero-bias conductance and, for some parameters, modestly enhance the spin polarization of currents in applied magnetic field. Correlated hybridization can also explain a gate-voltage dependence to the Kondo scale similar to what has been observed in recent experiments.
Comments: 4 pages, 5 figures
Subjects: Strongly Correlated Electrons (cond-mat.str-el)
DOI: 10.1103/PhysRevB.76.115401
Cite as: arXiv:cond-mat/0611106 [cond-mat.str-el]
  (or arXiv:cond-mat/0611106v1 [cond-mat.str-el] for this version)

Submission history

From: Jong-Chin Lin [view email]
[v1] Sat, 4 Nov 2006 06:28:27 GMT (46kb)

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