References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
(Submitted on 10 Nov 2006 (v1), last revised 1 Feb 2007 (this version, v2))
Abstract: We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
Submission history
From: Kohei Hamaya [view email][v1] Fri, 10 Nov 2006 00:36:26 GMT (860kb)
[v2] Thu, 1 Feb 2007 12:09:48 GMT (860kb)
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