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Condensed Matter > Materials Science

Title: Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Abstract: We report first principles ab initio density functional calculations of hydrogen dynam- ics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with simple models. Si-Si bond centers and Si ring centers are local energy minima as expected. We also describe a new mechanism for break- ing Si-H bonds to release free atomic H into the network: a fluctuation bond center detachment (FBCD) assisted diffusion. H dynamics in a-Si:H is dominated by structural fluctuations intrinsic to the amorphous phase not present in the crystal.
Comments: 4 pages, 5 figures, In press EPL (Jun. 2007)
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1209/0295-5075/79/36001
Cite as: arXiv:cond-mat/0611375 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0611375v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Tesfaye Abtew [view email]
[v1] Tue, 14 Nov 2006 16:31:28 GMT (382kb)
[v2] Sat, 16 Jun 2007 18:46:59 GMT (587kb)

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