Characterization of Disorder in Semiconductors via Single-Photon Interferometry

Bozsoki, P.; Thomas, P.; Kira, M.; Hoyer, W.; Meier, T.; Koch, S. W.; Maschke, K.; Varga, I.; Stolz, H.

doi:10.1103/PhysRevLett.97.227402

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Condensed Matter > Disordered Systems and Neural Networks

Title: Characterization of Disorder in Semiconductors via Single-Photon Interferometry

Authors: P. Bozsoki (1), P. Thomas (1), M. Kira (1), W. Hoyer (1), T. Meier (1), S.W. Koch (1), K. Maschke (2), I. Varga (3), H. Stolz (4), ((1)Philipps-University Marburg, (2) Ecole Polytechnique Federale, Lausanne, (3)BUTE, (4)Universitaet Rostock)

(Submitted on 15 Nov 2006)

Abstract: The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.

Comments:	4 pages, 2 figures, accepted for PRL
Subjects:	Disordered Systems and Neural Networks (cond-mat.dis-nn)
Journal reference:	Physical Review Letters 97, 227402 (2006)
DOI:	10.1103/PhysRevLett.97.227402
Cite as:	arXiv:cond-mat/0611411 [cond-mat.dis-nn]
	(or arXiv:cond-mat/0611411v1 [cond-mat.dis-nn] for this version)

Submission history

From: Imre Varga [view email]
[v1] Wed, 15 Nov 2006 16:10:41 GMT (449kb)

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