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Condensed Matter

Title: Nanoscale Field-Effect Transistors: An Ultimate Size Analysis

Abstract: We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D electrons in an undoped channel between highly doped source and drain. When applied to silicon n-MOSFETs, calculations show that the voltage gain (necessary for logic applications) drops sharply at L ~ 10 nm, while the conductance modulation remains sufficient for memory applications until L ~ 4 nm.
Comments: An erroneous number in estimates corrected, and paper shortened to fit APL size requirements
Subjects: Condensed Matter (cond-mat)
DOI: 10.1063/1.120473
Cite as: arXiv:cond-mat/9706026
  (or arXiv:cond-mat/9706026v2 for this version)

Submission history

From: Fedor G. Pikus [view email]
[v1] Tue, 3 Jun 1997 17:40:29 GMT (65kb)
[v2] Mon, 17 Nov 1997 22:50:42 GMT (61kb)

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