Absence of Localization in Certain Field Effect Transistors

Washburn, S; Popovic, D; Li, KP; Fowler, AB

doi:10.1006/spmi.1997.0526

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Condensed Matter > Strongly Correlated Electrons

Title: Absence of Localization in Certain Field Effect Transistors

Authors: S Washburn, D Popovic, KP Li, AB Fowler (The University of North Carolina at Chapel Hill, National High Magnetic Field Laboratory)

(Submitted on 29 Oct 1997 (v1), last revised 1 Nov 1997 (this version, v2))

Abstract: We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B=0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic field dependence of the conductance provide convincing evidence that the MIT is driven by Coulomb interactions among the carriers and is dramatically sensitive to spin polarization of the carriers.

Comments:	8 pages, LaTeX, figure label changed
Subjects:	Strongly Correlated Electrons (cond-mat.str-el); Disordered Systems and Neural Networks (cond-mat.dis-nn); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI:	10.1006/spmi.1997.0526
Report number:	SW-108
Cite as:	arXiv:cond-mat/9710315 [cond-mat.str-el]
	(or arXiv:cond-mat/9710315v2 [cond-mat.str-el] for this version)

Submission history

From: Sean Washburn [view email]
[v1] Wed, 29 Oct 1997 14:51:44 GMT (94kb)
[v2] Sat, 1 Nov 1997 01:26:07 GMT (94kb)

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