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Condensed Matter > Materials Science

Title: Strain driven migration of In during the growth of InAs/GaAs quantum posts

Authors: D. Alonso-Álvarez, B. Alén, J. M. Ripalda, A. Rivera, A. G. Taboada, J. M. Llorens, Y. González, L. González, F. Briones
(Submitted on 8 Aug 2011 (v1), last revised 8 Sep 2013 (this version, v2))
Abstract: Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures.
Comments: 10 pages, 4 figures. Published in APL Materials
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: APL Materials. 1, 022112 (2013)
DOI: 10.1063/1.4818358
Cite as: arXiv:1108.1768 [cond-mat.mtrl-sci]
  (or arXiv:1108.1768v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Diego Alonso-Álvarez [view email]
[v1] Mon, 8 Aug 2011 18:07:07 GMT (744kb)
[v2] Sun, 8 Sep 2013 10:38:53 GMT (1611kb)
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