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Condensed Matter > Materials Science

Title: Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

Abstract: We present a method for noncontact, noninvasive measurements of dielectric constant, k, of 100-nm- to 1.5-\mu m-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 micron sampling spot size, and provides <0.3% precision and <2% accuracy for k-value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few-micron tip size.
Comments: 8 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Instrumentation and Detectors (physics.ins-det)
Journal reference: Appl. Phys. Lett. 88: 192906,2006
DOI: 10.1063/1.2203238
Cite as: arXiv:1108.2218 [cond-mat.mtrl-sci]
  (or arXiv:1108.2218v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Vladimir Talanov [view email]
[v1] Wed, 10 Aug 2011 16:41:32 GMT (122kb)

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