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Condensed Matter > Materials Science

Title: Basal-plane growth of cadmium arsenide by molecular beam epitaxy

Abstract: (001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surface morphology and structural characteristics, as measured by x-ray diffraction and reflectivity, atomic force microscopy, and scanning transmission electron microscopy. The electron mobility of 50-nm-thick films is found to be 9300 cm2/Vs at 2 K, comparable to the highest-quality films grown in the conventional (112) orientation. This work demonstrates a simple experimental framework for exploring topological phases that are predicted to exist in proximity to the three-dimensional Dirac semimetal phase.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Physical Review Materials 3, 031201(R) (2019)
DOI: 10.1103/PhysRevMaterials.3.031201
Cite as: arXiv:1904.00254 [cond-mat.mtrl-sci]
  (or arXiv:1904.00254v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Susanne Stemmer [view email]
[v1] Sat, 30 Mar 2019 17:03:07 GMT (1581kb)

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