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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Quantum transport in high-quality shallow InSb quantum wells

Abstract: InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells close to the surface. Here we report on a molecular beam epitaxy grown heterostructure of InSb quantum wells with substrate-side Si-doping and ultra-thin InAlSb (5 nm, 25 nm, and 50 nm) barriers to the surface. We demonstrate that the carrier densities in these quantum wells are gate-tunable and electron mobilities up to 350,000 $\rm{cm^2(Vs)^{-1}}$ are extracted from magneto-transport measurements. Furthermore, from temperature-dependent magneto-resistance measurements, we extract an effective mass of 0.02 $m_0$ and find a Zeeman splitting compatible with the expected g-factor.
Comments: Zijin Lei and Christian A. Lehner contributed equally to this work. For Supplementary Materials, please download the source files
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Appl. Phys. Lett. 115, 012101 (2019)
DOI: 10.1063/1.5098294
Cite as: arXiv:1904.00828 [cond-mat.mes-hall]
  (or arXiv:1904.00828v2 [cond-mat.mes-hall] for this version)

Submission history

From: Zijin Lei [view email]
[v1] Mon, 1 Apr 2019 13:12:52 GMT (7674kb,D)
[v2] Tue, 25 Jun 2019 09:25:56 GMT (3176kb,D)

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