Title: Emergence of tunnelling spin-orbit torques at magnetic-metal/semimetal heterojunctions

Abstract: Energy barriers associated with a carrier depletion layer at semiconductor/metal contacts serve as building blocks for modern electronic technology. Interfacial charge transfer is a general effect occurring even in metallic junctions. It might enable spin transport property tailoring in emerging spin-orbitronic devices but is rarely explored via conventional electrical techniques due to the narrow atomic-scale barrier width. Here, by employing a diffusive spin current with the spin Hall effect, we provide evidence that energy barriers are crucial for spin transport even in metallic junctions. In Ni$_{81}$Fe$_{19}$/Bi$_{0.1}$Sb$_{0.9}$ bilayers, carrier depletion region formation governs spin transmission and reflection, causing a sizable field-like torque much larger than the damping-like counterpart as a distinct tunnelling spin-orbit torque signature. Our theory reveals that interfacial tunnelling across the depletion region modulates the spin mixing conductance imaginary part such that it exceeds the real part in this metal/semimetal heterostructure, contrary to conventional wisdom. By minimizing the work function difference, we demonstrate a more than two orders of magnitude enhancement of the spin mixing conductance real part in Co$_{72}$Tb$_{28}$/Bi$_{0.1}$Sb$_{0.9}$ bilayers free from energy barriers. Our results provide a new mechanism to control the spin transport and spin torque phenomena considering interfacial engineering of metallic heterostructures.