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Condensed Matter > Materials Science

Title: First-Principles Theory for Schottky Barrier Physics

Abstract: We develop a first-principles theory for Schottky barrier physics. The Poisson equation is solved completely self-consistently with the electrostatic charge density and outside the normal density functional theory (DFT) electronic structure iteration loop, allowing computation of a Schottky barrier entirely from DFT involving thousands of atomic layers in the semiconductor. The induced charge in the bulk consists of conduction and valence band charges from doping and band bending, as well as charge from the evanescent states in the gap of the semiconductor. The Schottky barrier height is determined when the induced charge density and the induced electrostatic potential reach self-consistency.
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. B 104, 045429 (2021)
DOI: 10.1103/PhysRevB.104.045429
Cite as: arXiv:2001.00710 [cond-mat.mtrl-sci]
  (or arXiv:2001.00710v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Dmitry Skachkov [view email]
[v1] Fri, 3 Jan 2020 03:33:55 GMT (1005kb)
[v2] Mon, 3 May 2021 08:41:08 GMT (1393kb)

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