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Condensed Matter > Materials Science

Title: Nanostructured germanium with >99 % absorption at 300-1600 nm wavelengths

Abstract: Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor response, largely due to high reflection from the illuminated device surface. We demonstrate here a method to increase the sensitivity of Ge sensors by implementing nanostructures to the wafer surfaces. The absorbance of nanostructured Ge wafers is measured to be >99 % in the whole UV-VIS-NIR spectrum up to 1600 nm wavelength, which is a significant improvement to bare Ge wafers that reach absorption of only 63 % in maximum. The process is shown to be capable of producing uniform nanostructures covering full 100-mm-diameter substrates as well as wafers with etch mask openings of different sizes and shapes, which demonstrates its applicability to CMOS sensor manufacturing. The results imply that nanostructured Ge has potential to revolutionize the sensitivity of Ge-based sensors.
Comments: Article published in Advanced Optical Materials. Complete citation details and link to the article published in the journal were added
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph); Instrumentation and Detectors (physics.ins-det); Optics (physics.optics)
Journal reference: Advanced Optical Materials, vol. 8, no. 11, 2000047 (2020)
DOI: 10.1002/adom.202000047
Cite as: arXiv:2001.02532 [cond-mat.mtrl-sci]
  (or arXiv:2001.02532v3 [cond-mat.mtrl-sci] for this version)

Submission history

From: Toni P. Pasanen [view email]
[v1] Wed, 8 Jan 2020 14:04:39 GMT (561kb)
[v2] Thu, 29 Oct 2020 12:59:08 GMT (582kb)
[v3] Mon, 2 Nov 2020 05:56:43 GMT (582kb)

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